AlGaN/GaN high-electron-mobility transistors on sapphire...

physica status solidi (c) 2006 Vol. 3; Iss. 6

AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE

T. Aggerstam, M. Sjödin, S. Lourdudoss
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565152
File:
PDF, 191 KB
english, 2006
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