TEM analysis of annihilation process of threading...

physica status solidi (c) 2006 Vol. 3; Iss. 6

TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment

M. Hijikuro, N. Kuwano, M. Takeuchi, Y. Aoyagi
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565157
File:
PDF, 278 KB
english, 2006
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