InGaN quantum well epilayers morphological evolution under...

physica status solidi (c) 2006 Vol. 3; Iss. 6

InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E.A. Armour, W. E. Quinn
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565159
File:
PDF, 521 KB
english, 2006
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