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Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers
C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam, Y. S. SunVolume:
3
Year:
2006
Language:
english
Pages:
3
DOI:
10.1002/pssc.200565177
File:
PDF, 184 KB
english, 2006