Effects of GaN-buffer etching in atmospheric-pressure MOVPE...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Effects of GaN-buffer etching in atmospheric-pressure MOVPE growth of InN on sapphire

A. Yamamoto, Y. Nagai, H. Miwa, A. Hashimoto
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565180
File:
PDF, 139 KB
english, 2006
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