Membrane structures containing InGaN/GaN quantum wells...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Membrane structures containing InGaN/GaN quantum wells fabricated by wet etching of sacrificial silicon substrates

S.-H. Park, C. Liu, E. Gu, M. D. Dawson, I. M. Watson, K. Bejtka, P. R. Edwards, R. W. Martin
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565188
File:
PDF, 317 KB
english, 2006
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