Electrical and recombination properties and deep traps...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565195
File:
PDF, 343 KB
english, 2006
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