Reduced residual stress in GaN grown on 3c-SiC/Si(111)...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Reduced residual stress in GaN grown on 3c-SiC/Si(111) templates formed by C+-ion implantation

T. Kobayashi, N. Sawazaki, M. S. Cho, A. Hashimoto, A. Yamamoto, Y. Ito
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565204
File:
PDF, 100 KB
english, 2006
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