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Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy
A. Satake, K. Soejima, H. Aizawa, K. FujiwaraVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565220
File:
PDF, 128 KB
english, 2006