AlGaN films grown on trenched sapphire substrates using a...

physica status solidi (c) 2006 Vol. 3; Iss. 6

AlGaN films grown on trenched sapphire substrates using a low-temperature GaNP buffer layer by MOCVD

K. Sumiyoshi, M. Tsukihara, S. Kawamichi, F. Yan, S. Sakai
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565241
File:
PDF, 362 KB
english, 2006
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