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High quantum efficiency InGaN/GaN structures emitting at 540 nm
D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M. F. J. Costa, M. E. Vickers, R. Datta, C. J. Humphreys, E. J. ThrushVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565252
File:
PDF, 213 KB
english, 2006