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Narrow-band 400 nm MSM photodetectors using a thin InGaN layer on a GaN/sapphire structure
J. Ohsawa, T. Kozawa, O. Fujishima, H. ItohVolume:
3
Year:
2006
Language:
english
Pages:
5
DOI:
10.1002/pssc.200565268
File:
PDF, 346 KB
english, 2006