![](/img/cover-not-exists.png)
Suppression of gate leakage current in GaN MOS devices by passivation with photo-grown Ga2O3
H.-M. Wu, L.-H. PengVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565272
File:
PDF, 271 KB
english, 2006