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p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE
T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. SawakiVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565305
File:
PDF, 220 KB
english, 2006