Growth of Fe doped semi-insulating GaN on sapphire and...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

M. Rudziński, V. Desmaris, P. A. van Hal, J. L. Weyher, P. R. Hageman, K. Dynefors, T. C. Rödle, H. F. F. Jos, H. Zirath, P. K. Larsen
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Volume:
3
Year:
2006
Language:
english
Pages:
6
DOI:
10.1002/pssc.200565379
File:
PDF, 400 KB
english, 2006
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