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Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates
K. Balakrishnan, N. Fujimoto, T. Kitano, A. Bandoh, M. Imura, K. Nakano, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro, K. Shimono, T. Riemann, J. ChristenVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565387
File:
PDF, 204 KB
english, 2006