Surface segregation of Si and Mg dopants in MOVPE grown GaN...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopy

Th. Schmidt, M. Siebert, J. I. Flege, S. Gangopadhyay, A. Pretorius, R. Kröger, S. Figge, L. Gregoratti, A. Barinov, D. Hommel, J. Falta
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565437
File:
PDF, 216 KB
english, 2006
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