MOCVD of InGaN-based light emitting structures on silicon...

MOCVD of InGaN-based light emitting structures on silicon substrates with strain optimized buffer layers using long Al pre-deposition

J.-Y. Clames, Ch. Giesen, T. Meyer, M. Heuken
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565446
File:
PDF, 295 KB
english, 2006
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