Study of unintentional arsenic incorporation into free-standing zinc-blende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substrates
S. V. Novikov, N. Zainal, C. T. Foxon, A. J. Kent, F. Luckert, P. R. Edwards, R. W. MartinVolume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983420
File:
PDF, 138 KB
english, 2010