Volume 7; Issue 7-8

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physica status solidi (c)
Volume 7; Issue 7-8

physica status solidi (c)

Volume 7; Issue 7-8

1

Anomalous capacitance–voltage characteristics of Pt–AlGaN/GaN Schottky diodes exposed to hydrogen

Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 113 KB

english, 2010

2

Spontaneous polarization in III-nitride materials: crystallographic revision

Sergey Yu. Karpov

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 84 KB

english, 2010

3

Current crowding effect on light extraction efficiency of thin-film LEDs

M. V. Bogdanov, K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, M. S. Ramm, S. Yu. Karpov

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 216 KB

english, 2010

4

Effect of ITO spreading layer on performance of blue light-emitting diodes

M. V. Bogdanov, K. A. Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, M. S. Ramm, S. Yu. Karpov

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 248 KB

english, 2010

5

Buffer-trap and surface-state effects on gate lag in AlGaN/GaN HEMTs

Kazushige Horio, Atsushi Nakajima

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 147 KB

english, 2010

6

Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements

Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, Masaaki Nakayama

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 81 KB

english, 2010

7

Study of unintentional arsenic incorporation into free-standing zinc-blende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substrates

S. V. Novikov, N. Zainal, C. T. Foxon, A. J. Kent, F. Luckert, P. R. Edwards, R. W. Martin

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 138 KB

english, 2010

8

Deep-UV transparent bulk single-crystalline AlN substrates

Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Paul Heimann, Martin Feneberg, Shunro Nagata, Albrecht Winnacker

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 222 KB

english, 2010

9

Sublimation growth of bulk crystals of AlN-rich (AlN)x(SiC)1–x solid solutions

Matthias Bickermann, Octavian Filip, Boris M. Epelbaum, Paul Heimann, Albrecht Winnacker

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 139 KB

english, 2010

10

Formation mechanism of Al-depleted bands in MOVPE-AlGaN layer on GaN template with trenches

Noriyuki Kuwano, Tetsuya Ezaki, Takuya Kurogi, Hideto Miyake, Kazumasa Hiramatsu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 659 KB

english, 2010

11

Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

Benjamin Damilano, Thomas Huault, Julien Brault, Denis Lefebvre, Jean Massies

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 61 KB

english, 2010

12

Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers

J. Y. Ni, Y. Hao, J. S. Xue, Z. H. Xu, Z. F. Zhang, J. C. Zhang, L. A. Yang, J. F. Zhang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 320 KB

english, 2010

13

Optical properties of bulk-like GaN nanorods grown on Si(111) substrates by rf-plasma assisted molecular beam epitaxy

Young S. Park, T. W. Kang, Hyunsik Im, Mark J. Holmes, Robert A. Taylor

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 384 KB

english, 2010

14

Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV

K. M. Yu, S. V. Novikov, R. Broesler, C. R. Staddon, M. Hawkridge, Z. Liliental-Weber, I. Demchenko, J. D. Denlinger, V. M. Kao, F. Luckert, R. W. Martin, W. Walukiewicz, C. T. Foxon

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 138 KB

english, 2010

15

Influence of the piezoelectric constant on the electronic structure of wurtzite InGaN quantum dots

Kuo-Bin Hong, Wei-Yi Tsai, Mao-Kuen Kuo

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 130 KB

english, 2010

16

Mg-related acceptors in GaN

B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, T. Paskova, A. Usui

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 116 KB

english, 2010

17

Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes

Dongpyo Han, Jongin Shim, Dong-Soo Shin, Eunsoo Nam, Hyungmoo Park

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 219 KB

english, 2010

18

Study of two-dimensional electron gas in AlGaN channel HEMTs with high crystalline quality

Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata, Kenichiro Takeda, Hiroshi Amano

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 141 KB

english, 2010

19

RF-MBE growth of InN on 4H-SiC (0001) with off-angles

Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 532 KB

english, 2010

20

Plasma assisted LED wafer scribing and fabrication of Ag nanoparticle-embedded LED

Jong-Moo Lee, Sung-Bum Bae, Doo-Hyub Youn, Suntak Park, Jung Jin Ju, Moon Sik Jang, Hyun Min Jung, Chang Tae Kim

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 493 KB

english, 2010

21

The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates

Tim Bohnen, Gerbe W. G. van Dreumel, Jan L. Weyher, Willem J. P. van Enckevort, Hina Ashraf, Aryan E. F. de Jong, Paul R. Hageman, Elias Vlieg

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 556 KB

english, 2010

22

Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates

T. Wunderer, J. Wang, F. Lipski, S. Schwaiger, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, S. S. Shirokov, A. E. Yunovich, F. Scholz

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 839 KB

english, 2010

23

Photoelectrochemical application of GaN nanostructures on Si for hydrogen generation by water reduction

Katsushi Fujii, Takashi Kato, Keiichi Sato, Inho Im, Jiho Chang, Takafumi Yao

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 80 KB

english, 2010

24

Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias

Kayo Koike, Keiichi Sato, Katsushi Fujii, Takenari Goto, Takafumi Yao

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

25

HVPE GaN substrates: growth and characterization

D. Gogova, D. Siche, A. Kwasniewski, M. Schmidbauer, R. Fornari, C. Hemmingsson, R. Yakimova, B. Monemar

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 208 KB

english, 2010

26

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs

Feng Tian, Eng Fong Chor

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 158 KB

english, 2010

27

Carrier relaxation dynamics in InN investigated by femtosecond pump-probe technique

Saulius Nargelas, Ramūnas Aleksiejūnas, Mikas Vengris, Kęstutis Jarašiūnas

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 97 KB

english, 2010

28

Carrier dynamics in GaN layers overgrown on nanocolumnar structures

Hsiang-Chen Wang, Tung-Yi Tang, C. C. Yang, T. Malinauskas, K. Jarašiūnas

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 184 KB

english, 2010

29

GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

Shunfeng Li, Sönke Fündling, Ünsal Sökmen, Richard Neumann, Stephan Merzsch, Peter Hinze, Thomas Weimann, Uwe Jahn, Achim Trampert, Henning Riechert, Erwin Peiner, Hergo-Heinrich Wehmann, Andreas Waag

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 113 KB

english, 2010

30

Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment

Lev Avakyants, Pavel Bokov, Anatoly Chervyakov, Alexander Yunovich, Elena Vasileva, Boris Yavich

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 187 KB

english, 2010

31

Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs

Z. Li, K. Tang, T. P. Chow, M. Sugimoto, T. Uesugi, T. Kachi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 304 KB

english, 2010

32

Design and performance of LEDs with circular geometry

X.H. Wang, P.T. Lai, H.W. Choi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 277 KB

english, 2010

33

Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix

K. S. Zhuravlev, I. A. Aleksandrov, P.-O. Holtz

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 171 KB

english, 2010

34

Failure analysis of InGaN/GaN LEDs with emission wavelength between 440 nm and 550 nm

Z. L. Li, P. T. Lai, H. W. Choi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 128 KB

english, 2010

35

Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4″ silicon substrate

Pum Chian Khai, Takaaki Suzue, Yusuke Sakai, S. Lawrence Selvaraj, Takashi Egawa, Takashi Jimbo

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 276 KB

english, 2010

36

Photoluminescence of GaN/AlN quantum dots at high excitation powers

Ivan Aleksandrov, Konstantin Zhuravlev

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 303 KB

english, 2010

37

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

Takashi Kawasaki, Atsushi Nishikawa, Naoki Furukawa, Yoshikazu Terai, Yasufumi Fujiwara

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 105 KB

english, 2010

38

Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects

L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, S. T. Chou, Y. T. Lin, L. W. Tu, J.-C. Harmand

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 255 KB

english, 2010

39

Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs

Markus Maier, Thorsten Passow, Michael Kunzer, Wilfried Pletschen, Klaus Köhler, Joachim Wagner

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 62 KB

english, 2010

40

Q-factor measurements on planar nitride cavities

Daniel P. Collins, Mark J. Holmes, Robert A. Taylor, Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 287 KB

english, 2010

41

Theoretical analyses of In incorporation and compositional instability in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 168 KB

english, 2010

42

Spatially-resolved photoluminescence study of high indium content InGaN LED structures

G. Tamulaitis, J. Mickevičius, D. Dobrovolskas, E. Kuokštis, M. Shur, M. Shatalov, J. Yang, R. Gaska

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 182 KB

english, 2010

43

Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

Carsten Netzel, Veit Hoffmann, Tim Wernicke, Arne Knauer, Markus Weyers, Michael Kneissl

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 93 KB

english, 2010

44

Deep etch of GaN by laser micromachining

Giuseppe Y. Mak, Edmund Y. Lam, H. W. Choi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 221 KB

english, 2010

45

High-temperature operation of GaN-based OPAMP on silicon substrate

Kazuki Nomoto, Kazuya Hasegawa, Tohru Nakamura

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 186 KB

english, 2010

46

Structural and optical characterization of (11-22) semipolar GaN on m -plane sapphire without low temperature buffer layer

Sung-Nam Lee, K. K. Kim, O. H. Nam, J. H. Kim, H. Kim

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 185 KB

english, 2010

47

GaN-based light emitting diodes with periodic nano-structures on the surface fabricated by nanoimprint lithography technique

Yoshiki Naoi, Masakazu Matsumoto, Tianya Tan, Mistuaki Tohno, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 556 KB

english, 2010

48

Recess gate AlGaN/GaN HEMTs using overlap gate metal structure

Toshihide Ide, Guanxi Piao, Yoshiki Yano, Mitsuaki Shimizu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 129 KB

english, 2010

49

Growth kinetics of AlxGa1–xN layers (0 < x < 1) in plasma-assisted molecular beam epitaxy

A. M. Mizerov, V. N. Jmerik, P. S. Kop'ev, S. V. Ivanov

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 222 KB

english, 2010

50

Study on the effect of the relative position of the phosphor layer in the LED package on the high power LED lifetime

Jung-Ha Hwang, Yu-Dong Kim, Jae-Wook Kim, Su-Jung Jung, Ho-Ki Kwon, Tchang-Hun Oh

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 589 KB

english, 2010

51

Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers

M. A. Moram, M. J. Kappers, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 406 KB

english, 2010

52

Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface

Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 358 KB

english, 2010

53

Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

H. Ishikawa, K. Shimanaka, M. Azfar bin M. Amir, Y. Hara, M. Nakanishi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 419 KB

english, 2010

54

Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layers

Jong Ock Kim, Song Ki Hong, Kee Young Lim

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 577 KB

english, 2010

55

An analysis of transient thermal properties for high power GaN-based laser diodes

Jae Min Kim, Seungtaek Kim, Sung Bok Kang, Young Jin Kim, Hoon Jeong, Kyeongkyun Lee, Jongseok Kim, Sangdon Lee, Dongsik Suh, Jeong Hoon Yi, Yoonho Choi, Seok Gu Jung, Minsoo Noh

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 278 KB

english, 2010

56

Electronic properties of group III-A nitride sheets by molecular simulation

Ernesto Chigo Anota, Martín Salazar Villanueva, Heriberto Hernández Cocoletzi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 164 KB

english, 2010

57

GaN based nanorod light emitting diodes by selective area epitaxy

Keyan Zang, Soo Jin Chua

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 186 KB

english, 2010

58

Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDs

Y. K. Su, J. J. Chen, C. L. Lin, C. C. Kao, C. T. Lin

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 157 KB

english, 2010

59

Growth and characterization of GaN grown on moth-eye patterned sapphire substrates

Akihiro Ishihara, Ryousuke Kawai, Thukasa Kitano, Atushi Suzuki, Toshiyuki Kondo, Motoaki Iwaya, Hiroshi Amano, Satoshi Kamiyama, Isamu Akasaki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 461 KB

english, 2010

60

GaN surface nanostructure photodetector based on back side incidence

Jing Zhang, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 167 KB

english, 2010

61

Influence of doping on optical properties of catalyst- and mask-free grown gallium nitride nanorods

J. Kalden, K. Sebald, G. Kunert, T. Aschenbrenner, C. Kruse, D. Hommel, J. Gutowski

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 242 KB

english, 2010

62

Characterization of semipolar (112) GaN on c -plane sapphire sidewall of patterned r -plane sapphire substrate without SiO2 mask

Akihiro Kurisu, Kazuma Murakami, Yuki Abe, Narihito Okada, Kazuyuki Tadatomo

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 420 KB

english, 2010

63

Evaluation of multiple-quantum-well structure on InGaN template using (112) facet growth and mass transport

Daisuke Fujita, Takaaki Miyatake, Taku Shinagawa, Yuki Abe, Kazuma Murakami, Bocheng Li, Hiroyuki Matsumoto, Satoru Murayama, Narihito Okada, Kazuyuki Tadatomo

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 410 KB

english, 2010

64

Atom probe extended to AlGaN: three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice

Samantha E. Bennett, Peter H. Clifton, Robert M. Ulfig, Menno J. Kappers, Jonathan S. Barnard, Colin J. Humphreys, Rachel A. Oliver

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 96 KB

english, 2010

65

Growth mechanism of nonpolar m -plane GaN on maskless patterned a -plane sapphire substrate

Yuji Kawashima, Kazuma Murakami, Yuki Abe, Narihito Okada, Kazuyuki Tadatomo

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

66

Degradation characteristics of blue GaN-LED chip related to packages

Jeung-Mo Kang, Jae-Wook Kim, Jeong-Hyeon Choi, Du-Hyun Kim, Pyung-Sik Oh, Sang-Kook Han, Ho-Ki Kwon

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 344 KB

english, 2010

67

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 185 KB

english, 2010

68

Influence of slight misorientations of r -plane sapphire substrates on the growth of nonpolar a -plane GaN layers via HVPE

Stephan Schwaiger, Frank Lipski, Thomas Wunderer, Ferdinand Scholz

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 281 KB

english, 2010

69

Strain effect on optical polarization properties of a -plane GaN on r -plane sapphire

Chao Wu, Tongjun Yu, Renchun Tao, Chuanyu Jia, Zhijian Yang, Guoyi Zhang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 89 KB

english, 2010

70

Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

D. Watson-Parris, M. J. Godfrey, R. A. Oliver, P. Dawson, M. J. Galtrey, M. J. Kappers, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 342 KB

english, 2010

71

Light-emitting diodes fabricated on nanopatterned sapphire substrates by thermal lithography

Taku Shinagawa, Yuki Abe, Hiroyuki Matsumoto, BoCheng Li, Kazuma Murakami, Narihito Okada, Kazuyuki Tadatomo, Masato Kannaka, Hideo Fujii

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 929 KB

english, 2010

72

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

Yoshinao Kumagai, Hirokazu Adachi, Aya Otake, Yoshihiro Higashikawa, Rie Togashi, Hisashi Murakami, Akinori Koukitu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 405 KB

english, 2010

73

InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength

Dandan Zhu, Clifford McAleese, Maik Häberlen, Carmen Salcianu, Ted Thrush, Menno Kappers, Andrew Phillips, Penelope Lane, Michael Kane, David Wallis, Trevor Martin, Mike Astles, Colin Humphreys

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 194 KB

english, 2010

74

Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy

Tongtong Zhu, Menno J. Kappers, Michelle A. Moram, Rachel A. Oliver

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 225 KB

english, 2010

75

Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution

Xin Bo Zou, Hu Liang, Kei May Lau

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 319 KB

english, 2010

76

An ultraviolet micro-LED array and its application for microlens fabrication

L. Zhu, P. T. Lai, H. W. Choi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 260 KB

english, 2010

77

Nitride-based light-emitting solar cell

Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

78

Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures

Taek Lim, Rolf Aidam, Lutz Kirste, Patrick Waltereit, Stefan Müller, Oliver Ambacher

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 159 KB

english, 2010

79

A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensors

Stefanie Linkohr, Stefan Schwarz, Stefan Krischok, Pierre Lorenz, Volker Cimalla, Christoph Nebel, Oliver Ambacher

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 1.38 MB

english, 2010

80

Electroluminescence from a forward biased Ni/Au–AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface

B. K. Li, M. J. Wang, K. J. Chen, J. N. Wang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 131 KB

english, 2010

81

Study of Si implantation into Mg-doped GaN for MOSFETs

Clemens Ostermaier, Sang-Il Ahn, Kay Potzger, Manfred Helm, Jan Kuzmik, Dionyz Pogany, Gottfried Strasser, Jong-Ho Lee, Sung-Ho Hahm, Jung-Hee Lee

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 128 KB

english, 2010

82

Reliability of InGaN-based LEDs submitted to reverse-bias stress

Matteo Meneghini, Nicola Trivellin, Rainer Butendeich, Ulrich Zehnder, Berthold Hahn, Gaudenzio Meneghesso, Enrico Zanoni

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 133 KB

english, 2010

83

Cubic GaN growth on (311)A GaAs substrate by MOVPE

Sakuntam Sanorpim, Nuttapong Discharoen, Kentaro Onabe

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 321 KB

english, 2010

84

Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd3+

Kazutoshi Fukui, Syun Sawai, Tomoharu Ito, Shuichi Emura, Tsutomu Araki, Akira Suzuki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 131 KB

english, 2010

85

Simulations of laser diodes with nonpolar InGaN multi-quantum-wells

Z. Q. Li, Z. M. Simon Li, Joachim Piprek

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 336 KB

english, 2010

86

Near-UV LEDs for integrated InO-based ozone sensors

Ch. Y. Wang, V. Cimalla, M. Kunzer, T. Passow, W. Pletschen, O. Kappeler, J. Wagner, O. Ambacher

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 146 KB

english, 2010

87

Modelling of cubic AlxGa1–xN/GaN resonant tunnel diode structures

N. Zainal, P. Walker, A. J. Kent

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 71 KB

english, 2010

88

Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface

P. Lorenz, R. Gutt, M. Himmerlich, J. A. Schaefer, S. Krischok

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 225 KB

english, 2010

89

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 270 KB

english, 2010

90

Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE

Kai Cheng, S. Degroote, M. Leys, F. Medjdoub, J. Derluyn, B. Sijmus, M. Germain, G. Borghs

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 309 KB

english, 2010

91

In situ bow monitoring: towards uniform blue and green InGaN/GaN quantum well structures grown on 100 mm sapphire substrates by MOVPE

Kai Cheng, S. Degroote, M. Leys, L.Y. Zhang, J. Derluyn, M. Germain, G. Borghs

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 294 KB

english, 2010

92

High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach

Yi-Che Lee, Hee-Jin Kim, Yun Zhang, Suk Choi, Russell D. Dupuis, Jae-Hyun Ryou, Shyh-Chiang Shen

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 174 KB

english, 2010

93

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures

A. Strittmatter, M. Teepe, Z. Yang, C. Chua, J. Northrup, N. M. Johnson, P. Spiberg, R. G. W. Brown, V. Ivantsov, A. Syrkin, L. Shapovalov, A. Usikov

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 159 KB

english, 2010

94

Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth

Masakazu Sugiyama, Satoshi Yasukochi, Tomonari Shioda, Yukihiro Shimogaki, Yoshiaki Nakano

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 273 KB

english, 2010

95

HVPE growth of a -plane GaN on a GaN template (110)Si substrate

Tomoyuki Tanikawa, Noriyuki Suzuki, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 357 KB

english, 2010

96

Exciton localization in Al-rich AlGaN ternary alloy epitaxial layers

Hideaki Murotani, Yoichi Yamada, Tsunemasa Taguchi, Ryo Kato, Toshiya Yokogawa

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 103 KB

english, 2010

97

Effective mass of InN estimated by Raman scattering

Jung Gon Kim, Yasuhito Kamei, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Kouhei Sasamoto, Akio Yamamoto

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 392 KB

english, 2010

98

Hall mobilities in GaNxAs1-x

Javier Olea, Kin Man Yu, Wladek Walukiewicz, Germán Gonzalez-Díaz

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 159 KB

english, 2010

99

Growth of In-rich and Ga-rich InGaN alloys by MOCVD and fabrication of InGaN-based photoelectrodes

Bin Liu, Wenjun Luo, Rong Zhang, Zhigang Zou, Zili Xie, Zhaosheng Li, Dunjun Chen, Xiangqian Xiu, Ping Han, Youdou Zheng

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 291 KB

english, 2010

100

AlGaN-based 330 nm resonant-cavity-enhanced p–i–n junction ultraviolet photodetectors using AlN/AlGaN distributed Bragg reflectors

Zili Xie, Bin Liu, Chao Nie, Ruolian Jiang, Xiaoli Ji, Hong Zhao, Ping Han, Xiangqian Xiu, Rong Zhang, Youdou Zheng, Haimei Gong

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 278 KB

english, 2010

101

Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN

T. J. Badcock, M. Häberlen, M. J. Kappers, M. A. Moram, P. Dawson, C. J. Humphreys, R. A. Oliver

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 156 KB

english, 2010

102

Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults

T. J. Badcock, S. Hammersley, M. J. Kappers, C. J. Humphreys, P. Dawson

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

103

Characterising the degree of polarisation anisotropy in an a -plane GaN film

T. J. Badcock, S. Schulz, M. A. Moram, M. J. Kappers, P. Dawson, E. P. O'Reilly, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 207 KB

english, 2010

104

Fabrication of light emitting diodes transferred onto different substrates by GaN substrate separation technique

Y. Kunoh, K. Takeuchi, K. Inoshita, H. Ohbo, S. Tokunaga, T. Goto, T. Kunisato

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 142 KB

english, 2010

105

Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere

Hikari Suzuki, Uliana Panyukova, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 103 KB

english, 2010

106

Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001)

Hironori Okumura, Tsunenobu Kimoto, Jun Suda

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 191 KB

english, 2010

107

Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation

Kenichi Nakamura, Akira Hirako, Kazuhiro Ohkawa

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 156 KB

english, 2010

108

Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode

Ryosuke Kawai, Toshiyuki Kondo, Atushi Suzuki, Fumiharu Teramae, Thukasa Kitano, Kenta Tamura, Hisashi Sakurai, Motoaki Iwaya, Hiroshi Amano, Satoshi Kamiyama, Isamu Akasaki, Mark Chen, Alex Li, Kidd

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 339 KB

english, 2010

109

Growth of free-standing non-polar GaN on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy

Mitch M.C. Chou, D. R. Hang, Chenlong Chen, Chu-An Li, Jin-Wei Lu, Chun-Yu Lee, Jenq-Dar Tsay, Chuck W. C. Hsu, Calvin Liu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

110

“Step-graded interlayers” for the improvement of MOVPE InxGa1-xN (x ∼ 0.4) epi-layer quality

Md Rafiqul Islam, Y. Ohmura, A. Hashimoto, A. Yamamoto, K. Kinoshita, Y. Koji

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 205 KB

english, 2010

111

AlGaN/GaN HFETs on Fe-doped GaN substrates

Yoshinori Oshimura, Kenichiro Takeda, Takayuki Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Akira Bandoh, Takashi Udagawa

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 282 KB

english, 2010

112

High drive current and high frequency response of GaN nanowire metal-oxide-semiconductor field-effect transistor

Jeng-Wei Yu, Han-Min Wu, Lung-Han Peng

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 268 KB

english, 2010

113

Sublimation growth of nonpolar AlN single crystals and defect characterization

Issei Satoh, Satoshi Arakawa, Keisuke Tanizaki, Michimasa Miyanaga, Yoshiyuki Yamamoto

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 442 KB

english, 2010

114

Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer

T. Asai, K. Nonaka, K. Ban, K. Nagata, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 391 KB

english, 2010

115

Effects of growth temperature on the optical properties of InN nanostructures grown by MOCVD

Yuanping Sun, Yong-Hoon Cho, Hui Wang, Lili Wang, Shuming Zhang, Hui Yang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 335 KB

english, 2010

116

Design and performance of 1.55 μm laser using InGaN

Md. Tanvir Hasan, Md. Jahirul Islam, Rajib-ul- Hasan, Md. Sherajul Islam, Shahrina Yeasmin, Ashraful G. Bhuiyan, Md Rafiqul Islam, Akio Yamamoto

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 183 KB

english, 2010

117

Excitonic binding energies in non-polar GaN quantum wells

Stefan Schulz, Eoin P. O'Reilly

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 147 KB

english, 2010

118

Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

T. Sugiyama, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 93 KB

english, 2010

119

Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy

M. Sumiya, M. Lozach, N. Matsuki, S. Ito, N. Ohhashi, K. Sakoda, H. Yoshikawa, S. Ueda, K. Kobayashi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 413 KB

english, 2010

120

AlInN/InN metal oxide semiconductor heterostructure field effect transistor

Md. Sherajul Islam, Sakib M. Muhtadi, Md. Tanvir Hasan, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto, A. Yamamoto

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 181 KB

english, 2010

121

Optical band gap of h-BN epitaxial film grown on c -plane sapphire substrate

Yasuyuki Kobayashi, Chiun-Lung Tsai, Tetsuya Akasaka

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 183 KB

english, 2010

122

In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

H. Behmenburg, L. Rahimzadeh Khoshroo, C. Mauder, N. Ketteniss, K. H. Lee, M. Eickelkamp, M. Brast, D. Fahle, J. F. Woitok, A. Vescan, H. Kalisch, M. Heuken, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 113 KB

english, 2010

123

Electronic properties of nonpolar cubic GaN MOS structures

D. J. As, H. Pöttgen, E. Tschumak, K. Lischka

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 161 KB

english, 2010

124

a -plane AlN and AlGaN growth on r -plane sapphire by MOVPE

Reina Miyagawa, Hideto Miyake, Kazumasa Hiramatsu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 1.43 MB

english, 2010

125

The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

Wenping Gu, Yue Hao, Lin'an Yang, Chao Duan, Huantao Duan, Jincheng Zhang, Xiaohua Ma

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 350 KB

english, 2010

126

Vertical-type InGaN/GaN light emitting diodes with high efficiency reflector ITO/APC alloy on p-GaN

Sung Min Hwang, Hyun Kyong Cho, Ho Ki Kwon, Tchang Hun Oh

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 396 KB

english, 2010

127

Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells

Takao Oto, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 298 KB

english, 2010

128

2DEG properties in InGaN/InN/InGaN-based double channel HEMTs

Md. Tanvir Hasan, Md. Rejvi Kaysir, Md. Sherajul Islam, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto, A. Yamamoto

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 125 KB

english, 2010

129

Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy

Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 374 KB

english, 2010

130

Improving current spreading of GaN-based LEDs by N -pad current surrounding design

Chun-Fu Tsai, Yan-Kuin Su, Chun-Liang Lin

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 255 KB

english, 2010

131

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Theeradetch Detchprohm, Mingwei Zhu, Shi You, Yufeng Li, Liang Zhao, Edward A. Preble, Tanya Paskova, Drew Hanser, Christian Wetzel

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 179 KB

english, 2010

132

Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy

O. Landré, V. Fellmann, P. Jaffrennou, C. Bougerol, H. Renevier, B. Daudin

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 232 KB

english, 2010

133

Quaternary nitride heterostructure field effect transistors

L. Rahimzadeh Khoshroo, N. Ketteniss, C. Mauder, H. Behmenburg, J. F. Woitok, I. Booker, J. Gruis, M. Heuken, A. Vescan, H. Kalisch, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 153 KB

english, 2010

134

Dislocation density assessment via X-ray GaN rocking curve scans

I. Booker, L. Rahimzadeh Khoshroo, J. F. Woitok, V. Kaganer, C. Mauder, H. Behmenburg, J. Gruis, M. Heuken, H. Kalisch, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 209 KB

english, 2010

135

Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators

F. Niebelschuetz, K. Brueckner, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher, M. A. Hein

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 204 KB

english, 2010

136

P-type doping of semipolar GaN(11$ ar 2 $2) by plasma-assisted molecular-beam epitaxy

A. Das, L. Lahourcade, J. Pernot, S. Valdueza-Felip, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 147 KB

english, 2010

137

AlN substrates and epitaxy results

Heikki Helava, Tat'jana Chemekova, Oleg Avdeev, Eugeny Mokhov, Sergey Nagalyuk, Yuri Makarov, Mark Ramm

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

138

Structural differences in Mg-doped InN – indication of polytypism

Z. Liliental-Weber, M. E. Hawkridge, X. Wang, A. Yoshikawa

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 559 KB

english, 2010

139

A precise ray tracing simulation model for GaN based light emitting diodes

Zhiyuan Yang, Tongjun Yu, Sen Mu, Zhizhong Chen, Guoyi Zhang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 98 KB

english, 2010

140

Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers

Kenichiro Takeda, Fumiaki Mori, Yuji Ogiso, Tomoaki Ichikawa, Kentaro Nonaka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 308 KB

english, 2010

141

Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductance

Hyeongnam Kim, Wu Lu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 116 KB

english, 2010

142

Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contacts

Yoshitaka Nakano, Nobuyuki Matsuki, Yoshihiro Irokawa, Masatomo Sumiya

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 157 KB

english, 2010

143

Fabrication of field emitters using GaN particles

Yuichiro Minakuchi, Yoichiro Neo, Hidenori Mimura, Kazuhiko Hara

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 266 KB

english, 2010

144

Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes

Tim Kolbe, Toni Sembdner, Arne Knauer, Viola Kueller, Hernan Rodriguez, Sven Einfeldt, Patrick Vogt, Markus Weyers, Michael Kneissl

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 467 KB

english, 2010

145

Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements

S. Sintonen, S. Suihkonen, O. Svensk, P. T. Törmä, M. Ali, M. Sopanen, H. Lipsanen

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 304 KB

english, 2010

146

Temperature control of multiple wafers during etching of 2′ sapphire wafers for patterned sapphire substrates (PSS)

Mark Dineen, Zhong Ren

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 221 KB

english, 2010

147

Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatment

Young Jun Choi, Hae-Kon Oh, Jung-Gyu Kim, Hyun-Hee Hwang, Hae-Yong Lee, Won-Jae Lee, Byoung-Chul Shin, Jonghee Hwang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 710 KB

english, 2010

148

Characterization of etch pit density for gallium nitride layer grown by HVPE and MOCVD

Hae-Kon Oh, Jung-Gyu Kim, Hyun-Hee Hwang, Young Jun Choi, Hae-Yong Lee, Won-Jae Lee, Byoung-Chul Shin, Jonghee Hwang

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

149

Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates

James Grandusky, Yongjie Cui, Shawn Gibb, Mark Mendrick, Leo Schowalter

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 131 KB

english, 2010

150

Combination of short-range periodicity and interfacial stress effects on valence band scheme in strained MQW (GaN/AlGaN)n

Shuichi Emura, Hironobu Tani, Masane Kin, Yi-Kai Zhou, Shigehiko Hasegawa, Hajime Asahi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 105 KB

english, 2010

151

AlN bulk crystal growth by sublimation method

Tomohisa Kato, Ichiro Nagai, Tomonori Miura, Hiroyuki Kamata, Kunihiro Naoe, Kazuo Sanada, Hajime Okumura

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 164 KB

english, 2010

152

Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes

S. Grzanka, P. Perlin, R. Czernecki, L. Marona, M. Boćkowski, B. Łucznik, M. Leszczyński, A. Khachapuridze, J. Goss, U. T. Schwarz, T. Suski

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 100 KB

english, 2010

153

Hydrogen sensing performance dependence on catalytic metal thickness of Pt/AlGaN/GaN Schottky diodes

Junghui Song, Wu Lu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 125 KB

english, 2010

154

Mechanical properties characterization of c -plane (0001) and m -plane (10–10) GaN by nanoindentation examination

Masaki Fujikane, Akira Inoue, Toshiya Yokogawa, Shijo Nagao, Roman Nowak

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 399 KB

english, 2010

155

Lateral patterning of GaN polarity using wet etching process

Yujiro Fukuhara, Ryuji Katayama, Kentaro Onabe

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 282 KB

english, 2010

156

Gate-recessed normally-off GaN-on- Si HEMT using a new O2-BCl3 digital etching technique

Shawn D. Burnham, Karim Boutros, Paul Hashimoto, Colleen Butler, Danny W.S. Wong, Ming Hu, Miroslav Micovic

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 144 KB

english, 2010

157

Optical anisotropy in semipolar (Al,In)GaN laser waveguides

W. Scheibenzuber, U. Schwarz, R. Veprek, B. Witzigmann, A. Hangleiter

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 180 KB

english, 2010

158

GaN growth on LiNbO3 (0001) – a first-principles simulation

Simone Sanna, Wolf Gero Schmidt

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 239 KB

english, 2010

159

AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain

Ki-Sik Im, Jong-Bong Ha, Ki-Won Kim, Jong-Sub Lee, Dong-Seok Kim, Hyun-Chul Choi, Jung-Hee Lee

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 226 KB

english, 2010

160

Contents: Phys. Status Solidi C 7/7-8

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 626 KB

english, 2010

161

Preface: Phys. Status Solidi C 7/7-8

General Chair of ICNS-8 Seong-Ju Park

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 295 KB

english, 2010

162

Light emission polarization properties of strained (112) semipolar InGaN quantum well

Hung-Hsun Huang, Yuh-Renn Wu

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

163

Cover Picture: Phys. Status Solidi C 7/7-8

Journal:

physica status solidi (c)

Year:

2010

File:

PDF, 311 KB

2010

164

Inside Front Cover: Phys. Status Solidi C 7/7-8

Journal:

physica status solidi (c)

Year:

2010

File:

PDF, 1012 KB

2010

165

Inside Back Cover: Phys. Status Solidi C 7/7-8

Journal:

physica status solidi (c)

Year:

2010

File:

PDF, 320 KB

2010

166

Back Cover: Phys. Status Solidi C 7/7-8

Journal:

physica status solidi (c)

Year:

2010

File:

PDF, 299 KB

2010

167

Evaluation and re-growth of p-GaN on nano-patterned GaN on sapphire substrate

Yuji Nariyuki, Masakazu Matsumoto, Takeshi Noda, Katsushi Nishino, Yoshiki Naoi, Shiro Sakai, Atsuyuki Fukano, Satoru Tanaka

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 211 KB

english, 2010

168

Structural analysis of nitride-based LEDs grown on micro- and nano-scale patterned sapphire substrates

Y. K. Su, J. J. Chen, C. L. Lin, C. C. Kao

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 193 KB

english, 2010

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