Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
Feng Tian, Eng Fong ChorVolume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983452
File:
PDF, 158 KB
english, 2010