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Low dislocation density nonpolar (11-20) GaN films achieved using scandium nitride interlayers
M. A. Moram, M. J. Kappers, C. J. HumphreysVolume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983494
File:
PDF, 406 KB
english, 2010