Electroluminescence from a forward biased Ni/Au–AlGaN/GaN...

Electroluminescence from a forward biased Ni/Au–AlGaN/GaN Schottky diode: evidence of Fermi level de-pinning at Ni/AlGaN interface

B. K. Li, M. J. Wang, K. J. Chen, J. N. Wang
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Volume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983533
File:
PDF, 131 KB
english, 2010
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