AlGaN-based 330 nm resonant-cavity-enhanced p–i–n junction...

physica status solidi (c) 2010 Vol. 7; Iss. 7-8

AlGaN-based 330 nm resonant-cavity-enhanced p–i–n junction ultraviolet photodetectors using AlN/AlGaN distributed Bragg reflectors

Zili Xie, Bin Liu, Chao Nie, Ruolian Jiang, Xiaoli Ji, Hong Zhao, Ping Han, Xiangqian Xiu, Rong Zhang, Youdou Zheng, Haimei Gong
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Volume:
7
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssc.200983572
File:
PDF, 278 KB
english, 2010
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