Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC(0001)
Hironori Okumura, Tsunenobu Kimoto, Jun SudaVolume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983579
File:
PDF, 191 KB
english, 2010