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Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy
Ryan G. Banal, Mitsuru Funato, Yoichi KawakamiVolume:
7
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssc.200983609
File:
PDF, 374 KB
english, 2010