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Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy
O. Landré, V. Fellmann, P. Jaffrennou, C. Bougerol, H. Renevier, B. DaudinVolume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983613
File:
PDF, 232 KB
english, 2010