New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A., Morris, R. J. H., Halpin, J. E., Rhead, S. D., Allred, P., Myronov, M., Gabani, S., Berkutov, I. B., Leadley, D. R.Volume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300164
Date:
January, 2014
File:
PDF, 998 KB
english, 2014