High electron mobility recovery in AlGaN/GaN 2DEG channels...

Semiconductor Science and Technology 2016 / 06 Vol. 31; Iss. 6

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Chan, Silvia H, Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P, Mishra, Umesh K
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/6/065008
Date:
June, 2016
File:
PDF, 1.62 MB
english, 2016
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