Fast GaN based Schottky diodes on Si(111) substrate with...

physica status solidi (c) 2013 / 05 Vol. 10; Iss. 5

Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking

Treidel, Eldad Bahat, Hilt, Oliver, Wentzel, Andreas, Würfl, Joachim, Tränkle, Günther
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Volume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200569
Date:
May, 2013
File:
PDF, 364 KB
english, 2013
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