Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high- k /metal gate stacks
Xu, Hao, Yang, Hong, Wang, Yanrong, Wang, Wenwu, Wan, Guangxing, Ren, Shangqing, Luo, Weichun, Qi, Luwei, Zhao, Chao, Chen, Dapeng, Liu, Xinyu, Ye, TianchunVolume:
37
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/37/5/054005
Date:
May, 2016
File:
PDF, 775 KB
english, 2016