Volume 37; Issue 5

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Journal of Semiconductors
Volume 37; Issue 5

Journal of Semiconductors

Volume 37; Issue 5

1

Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

Yuan, Wenyu, Xu, Jingping, Liu, Lu, Huang, Yong, Cheng, Zhixiang

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 616 KB

english, 2016

2

Endurance characteristics of phase change memory cells

Huo, Ruru, Cai, Daolin, Bomy, Chen, Chen, Yifeng, Wang, Yuchan, Wang, Yueqing, Wei, Hongyang, Wang, Qing, Xia, Yangyang, Gao, Dan, Song, Zhitang

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.54 MB

english, 2016

3

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

Chen, Yonghe, Zheng, Xuefeng, Zhang, Jincheng, Ma, Xiaohua, Hao, Yue

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 4.37 MB

english, 2016

4

A 0.1–1.5 GHz, low jitter, area efficient PLL in 55-nm CMOS process

Zhong, Bo, Zhu, Zhangming

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 3.28 MB

english, 2016

5

DOIND: a technique for leakage reduction in nanoscale domino logic circuits

Shah, Ambika Prasad, Neema, Vaibhav, Daulatabad, Shreeniwas

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.33 MB

english, 2016

6

Performance analysis of charge plasma based dual electrode tunnel FET

Anand, Sunny, Amin, S. Intekhab, Sarin, R. K.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.02 MB

english, 2016

7

Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high- k /metal gate stacks

Xu, Hao, Yang, Hong, Wang, Yanrong, Wang, Wenwu, Wan, Guangxing, Ren, Shangqing, Luo, Weichun, Qi, Luwei, Zhao, Chao, Chen, Dapeng, Liu, Xinyu, Ye, Tianchun

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 775 KB

english, 2016

8

A 100 MS/s 9 bit 0.43 mW SAR ADC with custom capacitor array

Wang, Jingjing, Feng, Zemin, Xu, Rongjin, Chen, Chixiao, Ye, Fan, Xu, Jun, Ren, Junyan

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.31 MB

english, 2016

9

Novel trench gate field stop IGBT with trench shorted anode

Chen, Xudong, Cheng, Jianbing, Teng, Guobing, Guo, Houdong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.30 MB

english, 2016

10

Negative voltage bandgap reference with multilevel curvature compensation technique

Liu, Xi, Liu, Qian, Jin, Xiaoshi, Zhao, Yongrui, Jong-Ho, Lee

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.35 MB

english, 2016

11

Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

Xia, Congxin, Li, Jingbo

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.68 MB

english, 2016

12

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

Chaki, Sunil H., Chaudhary, Mahesh D., Deshpande, M. P.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 4.83 MB

english, 2016

13

15158A SP6T RF switch based on IBM SOI CMOS technology

Cheng, Zhiqun, Yan, Guoguo, Ni, Wayne, Zhu, Dandan, Ni, Hannah, Li, Jin, Chen, Shuai, Liu, Guohua

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.62 MB

english, 2016

14

Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands

Panda, Pranati, Dash, Gananath

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 284 KB

english, 2016

15

Researching the silicon direct wafer bonding with interfacial SiO 2 layer

Wang, Xiaoqing, Yu, Yude, Ning, Jin

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.68 MB

english, 2016

16

A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications

Asthana, Pranav Kumar, Goswami, Yogesh, Ghosh, Bahniman

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.93 MB

english, 2016

17

A new curvature compensation technique for CMOS voltage reference using | V GS | and Δ V BE

Li, Xuemin, Ye, Mao, Zhao, Gongyuan, Zhang, Yun, Zhao, Yiqiang

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.27 MB

english, 2016

18

Photoelectric characteristics of CH 3 NH 3 PbI 3 /p-Si heterojunction

Wu, Yamei, Yang, Ruixia, Tian, Hanmin, Chen, Shuai

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.34 MB

english, 2016

19

An LDMOS with large SOA and low specific on-resistance

Du, Wenfang, Lyu, Xinjiang, Chen, Xingbi

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 667 KB

english, 2016

20

Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

Cao, Chen, Zhang, Bing, Wang, Junfeng, Wu, Longsheng

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.74 MB

english, 2016

21

An 8.12 μW wavelet denoising chip for PPG detection and portable heart rate monitoring in 0.18 μm CMOS

Li, Xiang, Zhang, Xu, Li, Peng, Hu, Xiaohui, Chen, Hongda

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 865 KB

english, 2016