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Volume 37; Issue 5
Main
Journal of Semiconductors
Volume 37; Issue 5
Journal of Semiconductors
Volume 37; Issue 5
1
Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer
Yuan, Wenyu
,
Xu, Jingping
,
Liu, Lu
,
Huang, Yong
,
Cheng, Zhixiang
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 616 KB
Your tags:
english, 2016
2
Endurance characteristics of phase change memory cells
Huo, Ruru
,
Cai, Daolin
,
Bomy, Chen
,
Chen, Yifeng
,
Wang, Yuchan
,
Wang, Yueqing
,
Wei, Hongyang
,
Wang, Qing
,
Xia, Yangyang
,
Gao, Dan
,
Song, Zhitang
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.54 MB
Your tags:
english, 2016
3
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment
Chen, Yonghe
,
Zheng, Xuefeng
,
Zhang, Jincheng
,
Ma, Xiaohua
,
Hao, Yue
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 4.37 MB
Your tags:
english, 2016
4
A 0.1–1.5 GHz, low jitter, area efficient PLL in 55-nm CMOS process
Zhong, Bo
,
Zhu, Zhangming
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 3.28 MB
Your tags:
english, 2016
5
DOIND: a technique for leakage reduction in nanoscale domino logic circuits
Shah, Ambika Prasad
,
Neema, Vaibhav
,
Daulatabad, Shreeniwas
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.33 MB
Your tags:
english, 2016
6
Performance analysis of charge plasma based dual electrode tunnel FET
Anand, Sunny
,
Amin, S. Intekhab
,
Sarin, R. K.
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 2.02 MB
Your tags:
english, 2016
7
Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high- k /metal gate stacks
Xu, Hao
,
Yang, Hong
,
Wang, Yanrong
,
Wang, Wenwu
,
Wan, Guangxing
,
Ren, Shangqing
,
Luo, Weichun
,
Qi, Luwei
,
Zhao, Chao
,
Chen, Dapeng
,
Liu, Xinyu
,
Ye, Tianchun
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 775 KB
Your tags:
english, 2016
8
A 100 MS/s 9 bit 0.43 mW SAR ADC with custom capacitor array
Wang, Jingjing
,
Feng, Zemin
,
Xu, Rongjin
,
Chen, Chixiao
,
Ye, Fan
,
Xu, Jun
,
Ren, Junyan
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.31 MB
Your tags:
english, 2016
9
Novel trench gate field stop IGBT with trench shorted anode
Chen, Xudong
,
Cheng, Jianbing
,
Teng, Guobing
,
Guo, Houdong
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.30 MB
Your tags:
english, 2016
10
Negative voltage bandgap reference with multilevel curvature compensation technique
Liu, Xi
,
Liu, Qian
,
Jin, Xiaoshi
,
Zhao, Yongrui
,
Jong-Ho, Lee
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.35 MB
Your tags:
english, 2016
11
Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides
Xia, Congxin
,
Li, Jingbo
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 2.68 MB
Your tags:
english, 2016
12
SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques
Chaki, Sunil H.
,
Chaudhary, Mahesh D.
,
Deshpande, M. P.
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 4.83 MB
Your tags:
english, 2016
13
15158A SP6T RF switch based on IBM SOI CMOS technology
Cheng, Zhiqun
,
Yan, Guoguo
,
Ni, Wayne
,
Zhu, Dandan
,
Ni, Hannah
,
Li, Jin
,
Chen, Shuai
,
Liu, Guohua
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.62 MB
Your tags:
english, 2016
14
Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands
Panda, Pranati
,
Dash, Gananath
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 284 KB
Your tags:
english, 2016
15
Researching the silicon direct wafer bonding with interfacial SiO 2 layer
Wang, Xiaoqing
,
Yu, Yude
,
Ning, Jin
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.68 MB
Your tags:
english, 2016
16
A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications
Asthana, Pranav Kumar
,
Goswami, Yogesh
,
Ghosh, Bahniman
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 2.93 MB
Your tags:
english, 2016
17
A new curvature compensation technique for CMOS voltage reference using | V GS | and Δ V BE
Li, Xuemin
,
Ye, Mao
,
Zhao, Gongyuan
,
Zhang, Yun
,
Zhao, Yiqiang
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.27 MB
Your tags:
english, 2016
18
Photoelectric characteristics of CH 3 NH 3 PbI 3 /p-Si heterojunction
Wu, Yamei
,
Yang, Ruixia
,
Tian, Hanmin
,
Chen, Shuai
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 2.34 MB
Your tags:
english, 2016
19
An LDMOS with large SOA and low specific on-resistance
Du, Wenfang
,
Lyu, Xinjiang
,
Chen, Xingbi
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 667 KB
Your tags:
english, 2016
20
Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors
Cao, Chen
,
Zhang, Bing
,
Wang, Junfeng
,
Wu, Longsheng
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 2.74 MB
Your tags:
english, 2016
21
An 8.12 μW wavelet denoising chip for PPG detection and portable heart rate monitoring in 0.18 μm CMOS
Li, Xiang
,
Zhang, Xu
,
Li, Peng
,
Hu, Xiaohui
,
Chen, Hongda
Journal:
Journal of Semiconductors
Year:
2016
Language:
english
File:
PDF, 865 KB
Your tags:
english, 2016
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