An accurate interband tunneling model for InAs/GaSb...

physica status solidi (c) 2013 / 05 Vol. 10; Iss. 5

An accurate interband tunneling model for InAs/GaSb heterostructure devices

Shams, Md. Itrat Bin, Xie, Yi, Lu, Yeqing, Fay, Patrick
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Volume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200624
Date:
May, 2013
File:
PDF, 585 KB
english, 2013
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