Green emission from semipolar InGaN quantum wells grown on low-defect (112¯2) GaN templates fabricated on patterned r -sapphire
de Mierry, P., Kappei, L., Tendille, F., Vennéguès, P., Leroux, M., Zuniga-Perez, J.Volume:
253
Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201552298
Date:
January, 2016
File:
PDF, 744 KB
english, 2016