physica status solidi (b)

1

Complete orientational access for semipolar GaN devices on sapphire

Leung, Benjamin, Wang, Dili, Kuo, Yu-Sheng, Han, Jung

Journal:

Year:

2016

Language:

english

File:

PDF, 1.11 MB

english, 2016

2

Semipolar GaN-based heterostructures on foreign substrates

Scholz, Ferdinand, Caliebe, Marian, Gahramanova, Gulnaz, Heinz, Dominik, Klein, Martin, Leute, Robert A. R., Meisch, Tobias, Wang, Junjun, Hocker, Matthias, Thonke, Klaus

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 4.04 MB

english, 2016

3

Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg

Rychetsky, M., Koslow, I. L., Wernicke, T., Rass, J., Hoffmann, V., Weyers, M., Kneissl, M.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 369 KB

english, 2016

4

On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells

Schade, L., Wernicke, T., Rass, J., Ploch, S., Weyers, M., Kneissl, M., Schwarz, U. T.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 2.25 MB

english, 2016

5

Doping behavior of (112‾2) GaN grown on patterned sapphire substrates

Meisch, Tobias, Zeller, Raphael, Schörner, Sabine, Thonke, Klaus, Kirste, Lutz, Fuchs, Theo, Scholz, Ferdinand

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 456 KB

english, 2016

6

Internal quantum efficiency and carrier injection efficiency of c -plane, {101‾1} and {112‾2} InGaN/GaN-based light-emitting diodes

Wang, Junjun, Meisch, Tobias, Heinz, Dominik, Zeller, Raphael, Scholz, Ferdinand

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 579 KB

english, 2016

7

Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire

Pristovsek, Markus, Frentrup, Martin, Han, Yisong, Humphreys, Colin J.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 2.18 MB

english, 2016

8

Issue Information

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 660 KB

english, 2016

9

Polar and semipolar (112‾2) InAlN layers grown on AlN templates using MOVPE

Dinh, Duc V., Li, Haoning, Parbrook, Peter J.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.50 MB

english, 2016

10

Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

Hashimoto, Yasuhiro, Yamane, Keisuke, Okada, Narihito, Tadatomo, Kazuyuki

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.61 MB

english, 2016

11

MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN

Dinh, Duc V., Pristovsek, Markus, Kneissl, Michael

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.58 MB

english, 2016

12

Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method

Shedbalkar, Akshay, Andreev, Zhelio, Witzigmann, Bernd

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.91 MB

english, 2016

13

Embedded GaN nanostripes on c -sapphire for DFB lasers with semipolar quantum wells

Leute, Robert A. R., Heinz, Dominik, Wang, Junjun, Meisch, Tobias, Müller, Marcus, Schmidt, Gordon, Metzner, Sebastian, Veit, Peter, Bertram, Frank, Christen, Jürgen, Martens, Martin, Wernicke, Tim, K

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.65 MB

english, 2016

14

EBIC investigations on polar and semipolar InGaN LED structures

Knab, Manuel, Hocker, Matthias, Felser, Timo, Tischer, Ingo, Wang, Junjun, Scholz, Ferdinand, Thonke, Klaus

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.77 MB

english, 2016

15

Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures

Lohr, Matthias, Schregle, Ralph, Jetter, Michael, Wächter, Clemens, Müller-Caspary, Knut, Mehrtens, Thorsten, Rosenauer, Andreas, Pietzonka, Ines, Strassburg, Martin, Zweck, Josef

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 684 KB

english, 2016

16

Green emission from semipolar InGaN quantum wells grown on low-defect (112¯2) GaN templates fabricated on patterned r -sapphire

de Mierry, P., Kappei, L., Tendille, F., Vennéguès, P., Leroux, M., Zuniga-Perez, J.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 744 KB

english, 2016

17

InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (112¯2) GaN substrates

Nishinaka, Junichi, Funato, Mitsuru, Kido, Ryohei, Kawakami, Yoichi

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 588 KB

english, 2016

18

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells

Langer, Torsten, Klisch, Manuela, Alexej Ketzer, Fedor, Jönen, Holger, Bremers, Heiko, Rossow, Uwe, Meisch, Tobias, Scholz, Ferdinand, Hangleiter, Andreas

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 648 KB

english, 2016

19

Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Buß, E. R., Horenburg, P., Rossow, U., Bremers, H., Meisch, T., Caliebe, M., Scholz, F., Hangleiter, A.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 2.54 MB

english, 2016

20

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells

Wagner, J., Wächter, C., Wild, J., Müller, M., Metzner, S., Veit, P., Schmidt, G., Jetter, M., Bertram, F., Zweck, J., Christen, J., Michler, P.

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.96 MB

english, 2016

21

Polarization engineering of c -plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Neugebauer, Silvio, Metzner, Sebastian, Bläsing, Jürgen, Bertram, Frank, Dadgar, Armin, Christen, Jürgen, Strittmatter, André

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 873 KB

english, 2016

22

Nanoscale cathodoluminescence of stacking faults and partial dislocations in a -plane GaN

Schmidt, Gordon, Veit, Peter, Wieneke, Matthias, Bertram, Frank, Dadgar, Armin, Krost, Alois, Christen, Jürgen

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 596 KB

english, 2016

23

Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r -plane sapphire

Metzner, Sebastian, Bertram, Frank, Hempel, Thomas, Meisch, Tobias, Schwaiger, Stephan, Scholz, Ferdinand, Christen, Jürgen

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 845 KB

english, 2016

24

Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope

Müller, Marcus, Schmidt, Gordon, Metzner, Sebastian, Veit, Peter, Bertram, Frank, Leute, Robert Anton Richard, Heinz, Dominik, Wang, Junjun, Meisch, Tobias, Scholz, Ferdinand, Christen, Jürgen

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 825 KB

english, 2016

25

Semipolar GaN-based heterostructures on foreign substrates (Phys. Status Solidi B 1/2016)

Scholz, Ferdinand, Caliebe, Marian, Gahramanova, Gulnaz, Heinz, Dominik, Klein, Martin, Leute, Robert A. R., Meisch, Tobias, Wang, Junjun, Hocker, Matthias, Thonke, Klaus

Journal:

physica status solidi (b)

Year:

2016

File:

PDF, 1.08 MB

2016

26

Complete orientational access for semipolar GaN devices on sapphire (Phys. Status Solidi B 1/2016)

Leung, Benjamin, Wang, Dili, Kuo, Yu-Sheng, Han, Jung

Journal:

physica status solidi (b)

Year:

2016

File:

PDF, 965 KB

2016

27

pss - taking legacy to the future

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 214 KB

english, 2016

28

Recent and forthcoming publications in pss

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

29

Polarization-field control in nitride light emitters

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 117 KB

english, 2016

30

Growth and coalescence studies of (112‾2) oriented GaN on pre-structured sapphire substrates using marker layers

Caliebe, Marian, Han, Yisong, Hocker, Matthias, Meisch, Tobias, Humphreys, Colin, Thonke, Klaus, Scholz, Ferdinand

Journal:

physica status solidi (b)

Year:

2016

Language:

english

File:

PDF, 6.29 MB

english, 2016

31

Volume 253; Issue 1

Complete orientational access for semipolar GaN devices on sapphire

Semipolar GaN-based heterostructures on foreign substrates

Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg

On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells

Doping behavior of (112‾2) GaN grown on patterned sapphire substrates

Internal quantum efficiency and carrier injection efficiency of c -plane, {101‾1} and {112‾2} InGaN/GaN-based light-emitting diodes

Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire

Issue Information

Polar and semipolar (112‾2) InAlN layers grown on AlN templates using MOVPE

Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN

Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method

Embedded GaN nanostripes on c -sapphire for DFB lasers with semipolar quantum wells

EBIC investigations on polar and semipolar InGaN LED structures

Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures

Green emission from semipolar InGaN quantum wells grown on low-defect (112¯2) GaN templates fabricated on patterned r -sapphire

InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (112¯2) GaN substrates

Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells

Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells

Polarization engineering of c -plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Nanoscale cathodoluminescence of stacking faults and partial dislocations in a -plane GaN

Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r -plane sapphire

Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope

Semipolar GaN-based heterostructures on foreign substrates (Phys. Status Solidi B 1/2016)

Complete orientational access for semipolar GaN devices on sapphire (Phys. Status Solidi B 1/2016)

pss - taking legacy to the future

Recent and forthcoming publications in pss

Polarization-field control in nitride light emitters

Growth and coalescence studies of (112‾2) oriented GaN on pre-structured sapphire substrates using marker layers

Contents