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Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
Gong, Nanbo, Ma, Tso-PingVolume:
37
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2593627
Date:
September, 2016
File:
PDF, 559 KB
english, 2016