Volume 37; Issue 9

IEEE Electron Device Letters

Volume 37; Issue 9

1

High Power and Reliable SPST/SP3T RF MEMS Switches for Wireless Applications

Pal, J., Zhu, Y., Lu, J., Dao, D., Khan, F.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.61 MB

english, 2016

2

Voltage-Modulated Position Sensitivity and Nonlinearity in a-Si:H/c-Si p-i-n Structure by Different Connection Methods

Liu, Jihong, Liu, Yanan, Qiao, Shuang, Wang, Shufang, Fu, Guangsheng

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 581 KB

english, 2016

3

Improved Retention Time in Twin Gate 1T DRAM With Tunneling Based Read Mechanism

Navlakha, Nupur, Lin, Jyi-Tsong, Kranti, Abhinav

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 789 KB

english, 2016

4

A Split Gate Power FINFET With Improved ON-Resistance and Switching Performance

Luo, Xiaorong, Ma, Da, Tan, Qiao, Wei, Jie, Wu, Junfeng, Zhou, Kun, Sun, Tao, Liu, Qing, Zhang, Bo, Li, Zhaoji

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.94 MB

english, 2016

5

Current Sharing Behavior in Si IGBT and SiC MOSFET Cross-Switch Hybrid

Minamisawa, R. A., Vemulapati, U., Mihaila, A., Papadopoulos, C., Rahimo, M.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 571 KB

english, 2016

6

nm

Singh, Nandan, Kin Fai Ho, Charles, Nelvin Leong, Yurong, Lee, Kenneth Eng Kian, Wang, Hong

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 732 KB

english, 2016

7

High Performance and Electro-Mechanical Stability in Small Molecule: Polymer Blend Flexible Organic Field-Effect Transistors

Bharti, Deepak, Raghuwanshi, Vivek, Varun, Ishan, Mahato, Ajay Kumar, Tiwari, Shree Prakash

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.44 MB

english, 2016

8

Effects of Rare-Earth Element Dopants in High-Mobility InO x -Based Thin-Film Transistors

Lin, Zhenguo, Lan, Linfeng, Xiao, Peng, Sun, Sheng, Li, Yuzhi, Song, Wei, Gao, Peixiong, Song, Erlong, Zhang, Peng, Wang, Lei, Ning, Honglong, Peng, Junbiao

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 726 KB

english, 2016

9

Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

Vardi, Alon, del Alamo, Jesus A.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 864 KB

english, 2016

10

Gate Dielectric in FinFET Technologies

Chen, Yu-Zheng, Yuan, Jo En, Lin, Chrong Jung, King, Ya-Chin

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 698 KB

english, 2016

11

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Martin-Horcajo, Sara, Pomeroy, James W., Lambert, Benoit, Jung, Helmut, Blanck, Herve, Kuball, Martin

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.27 MB

english, 2016

12

Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V

Dutta, Maitreya, Koeck, Franz A. M., Hathwar, Raghuraj, Goodnick, Stephen M., Nemanich, Robert J., Chowdhury, Srabanti

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.04 MB

english, 2016

13

Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

Gong, Nanbo, Ma, Tso-Ping

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 559 KB

english, 2016

14

The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al 2 O 3

Kim, Taeho, Nam, Yunyong, Hur, Jihyun, Park, Sang-Hee Ko, Jeon, Sanghun

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 528 KB

english, 2016

15

IEEE Electron Device Letters

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 143 KB

english, 2016

16

Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise

Puglisi, Francesco Maria, Costantini, Felipe, Kaczer, Ben, Larcher, Luca, Pavan, Paolo

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 953 KB

english, 2016

17

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

Li, Fan, Sharma, Yogesh, Walker, David, Hindmarsh, Steven, Jennings, Mike, Martin, David, Fisher, Craig, Gammon, Peter, Perez-Tomas, Amador, Mawby, Phil

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 597 KB

english, 2016

18

A Novel IGBT Structure With Floating N-Doped Buried Layer in P-Base to Suppress Latch-Up

Yang, Fei, Tan, Ji, Zhang, Guangyin, Shen, Qianxing, Teng, Yuan, Zhu, Yangjun, Lu, Shuojin, Tian, Xiaoli

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 946 KB

english, 2016

19

Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates

Zou, Xinbo, Zhang, Xu, Lu, Xing, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

20

Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Hu, Chenming, Lin, Yueh Chin, Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 930 KB

english, 2016

21

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Zhao, Yunqi, Wan, Zhenni, Hetmanuik, Ulrich, Anantram, M. P.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 577 KB

english, 2016

22

Resistance Complemented Carbon-Nanotube Composite for Laser Printer Fusers Element

Chu, Kunmo, Sohn, Yoonchul, Park, Sung-Hoon

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 509 KB

english, 2016

23

IEEE Robert Bosch Micro and Nano Electro Mechanical Systems Award

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 850 KB

2016

24

Power Semiconductor Devices and Smart Power IC Technologies CFP

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 779 KB

2016

25

by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers

Zhang, Yanhua, Ma, Wenquan, Huang, Jianliang, Cao, Yulian, Liu, Ke, Huang, Wenjun, Zhao, Chengcheng, Ji, Haiming, Yang, Tao

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 487 KB

english, 2016

26

High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing

Hsu, William, Wang, Xiaoru, Wen, Feng, Wang, Yun, Dolocan, Andrei, Kim, Taegon, Tutuc, Emanuel, Banerjee, Sanjay K.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.01 MB

english, 2016

27

Modifying the Ni-MoS 2 Contact Interface Using a Broad-Beam Ion Source

Cheng, Zhihui, Cardenas, Jorge A., McGuire, Felicia, Najmaei, Sina, Franklin, Aaron D.

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 598 KB

english, 2016

28

Fermi Level Depinning on n-Epitaxial GeSn by Yb Stanogermanide Formation With Low-Contact Resistivity

Teng, Shih-Chieh, Su, Chang-Chia, Chen, Kuen-Yi, Chou, Chuan-Pu, Wu, Yung-Hsien

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 464 KB

english, 2016

29

Material

Li, Junhong, Li, Ping

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 685 KB

english, 2016

30

Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride

Liao, Chan-Yu, Lin, Hsiao-Chun, Wang, Chao-Lung, Lee, I-Che, Chou, Chia-Hsin, Li, Yu-Ren, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

31

A New Low-Voltage Triggering SCR for the Protection of a Double RESURF HV-LDMOS

Wu, Cheng-Hsu, Lee, Jian-Hsing, Lien, Chen-Hsin

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 720 KB

english, 2016

32

Transactions on Electron Devices Special Issue on Flexible Electronics CFP

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 1.31 MB

2016

33

IEDM Exhibits Program

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 538 KB

2016

34

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 1.33 MB

2016

35

Blank page

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 5 KB

2016

36

Changes to the Editorial Board

Liu, Tsu-Jae King

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 769 KB

english, 2016

37

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 168 KB

english, 2016

38

2016 IEEE International Electron Devices Meeting

Journal:

IEEE Electron Device Letters

Year:

2016

File:

PDF, 687 KB

2016

39

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 273 KB

english, 2016

40

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 110 KB

english, 2016

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