Transient dual interface measurement of junction-to-case...

Microelectronics Reliability 2016 / 11 Vol. 66

Transient dual interface measurement of junction-to-case thermal resistance in AlGaN/GaN HEMT utilizing an improved infrared microscope

Zhai, Yuwei, Liang, Faguo, Guo, Chunsheng, Liu, Yan
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Volume:
66
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.10.006
Date:
November, 2016
File:
PDF, 1.29 MB
english, 2016
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