Rational Design of High-RI Resists for 193nm Immersion...

Journal of Photopolymer Science and Technology 2007 Vol. 20; Iss. 5

Rational Design of High-RI Resists for 193nm Immersion Lithography

Whittaker, Andrew K., Blacey, Idriss, Chen, Lan, Dagaville, Bronwin, Liu, Heping, Conley, Will, Zimmerman, paul A.
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Volume:
20
Year:
2007
Language:
english
Journal:
Journal of Photopolymer Science and Technology
DOI:
10.2494/photopolymer.20.665
File:
PDF, 581 KB
english, 2007
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