Y-Doped BaTiO 3 as a Charge-Trapping Layer for Nonvolatile Memory Applications
Shi, R. P., Huang, X. D., Sin, Johnny K. O., Lai, P. T.Volume:
37
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2615063
Date:
December, 2016
File:
PDF, 758 KB
english, 2016