A New Electron Bridge Channel 1T-DRAM Employing Underlap...

IEEE Journal of the Electron Devices Society 2017 / 1 Vol. 5; Iss. 1

A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage

Lin, Jyi-Tsong, Lee, Wei-Han, Lin, Po-Hsieh, Haga, Steve W., Chen, Yun-Ru, Kranti, Abhinav
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Volume:
5
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2016.2633274
Date:
January, 2017
File:
PDF, 921 KB
english, 2017
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