IEEE Journal of the Electron Devices Society

1

A New Figure of Merit, ${\Delta V_{\text {DIBLSS}} /(I_{\rm {d},{\mathrm{ sat}}} /I_{\rm {sd},{\mathrm{ leak}}} )}$ , to Characterize Short-Channel Performance of a Bulk-Si n-Channel FinFET Device

Eng, Yi-Chuen, Hu, Luke, Chang, Tzu-Feng, Hsu, Steven, Chiou, Chun Mao, Wang, Ted, Yang, Chih-Wei, Lin, Chien-Ting, Wang, I-Chang, Chen, Ming-Chih, Lai, Andy, Wang, Pei-Wen, Hsu, Chia-Jung, Pang, Wen-

Journal:

Year:

2017

Language:

english

File:

PDF, 2.05 MB

english, 2017

2

A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage

Lin, Jyi-Tsong, Lee, Wei-Han, Lin, Po-Hsieh, Haga, Steve W., Chen, Yun-Ru, Kranti, Abhinav

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 921 KB

english, 2017

3

A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

Hasan, Mehdi, Gaillardon, Pierre-Emmanuel, Sensale-Rodriguez, Berardi

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 1.24 MB

english, 2017

4

Analytical Modeling and TCAD Simulation of a Quanta Image Sensor Jot Device With a JFET Source-Follower for Deep Sub-Electron Read Noise

Ma, Jiaju, Fossum, Eric R.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 1.49 MB

english, 2017

5

CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling

Chao, Calvin Yi-Ping, Tu, Honyih, Wu, Thomas, Chou, Kuo-Yu, Yeh, Shang-Fu, Hsueh, Fu-Lung

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 1.98 MB

english, 2017

6

TFET-Based Power Management Circuit for RF Energy Harvesting

Cavalheiro, David, Moll, Francesc, Valtchev, Stanimir

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 2.29 MB

english, 2017

7

High-Speed and High-Responsivity InP-Based Uni-Traveling-Carrier Photodiodes

Meng, Qianqian, Wang, Hong, Liu, Chongyang, Guo, Xin, Gao, Jianjun, Ang, Kian Siong

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 865 KB

english, 2017

8

Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations

Wu, Shu-Hua, Yu, Chien-Lin, Yu, Chang-Hung, Su, Pin

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 1.07 MB

english, 2017

9

Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO 2 -Based RRAM Arrays

Perez, Eduardo, Grossi, Alessandro, Zambelli, Cristian, Olivo, Piero, Wenger, Christian

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 898 KB

english, 2017

10

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

Chinni, Vinay Kumar, Zaknoune, Mohammed, Coinon, Christophe, Morgenroth, Laurence, Troadec, David, Wallart, Xavier, Desplanque, Ludovic

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

11

Change of Editor-in-Chief

Momose, Hisayo S.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 65 KB

english, 2017

12

J-EDS Comes of Age

Jindal, Renuka P.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 401 KB

english, 2017

13