Characteristics and analysis of 4H-SiC PiN diodes with a...

Journal of Semiconductors 2016 / 04 Vol. 37; Iss. 4

Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

Feng, Jiangmei, Shen, Huajun, Ma, Xiaohua, Bai, Yun, Wu, Jia, Li, Chengzhan, Liu, Kean, Liu, Xinyu
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Volume:
37
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/37/4/044009
Date:
April, 2016
File:
PDF, 418 KB
english, 2016
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