Volume 37; Issue 4

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Journal of Semiconductors
Volume 37; Issue 4

Journal of Semiconductors

Volume 37; Issue 4

1

GaN-on-Si blue/white LEDs: epitaxy, chip, and package

Sun, Qian, Yan, Wei, Feng, Meixin, Li, Zengcheng, Feng, Bo, Zhao, Hanmin, Yang, Hui

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 12.33 MB

english, 2016

2

A novel measuring method of clamping force for electrostatic chuck in semiconductor devices

Wang, Kesheng, Cheng, Jia, Zhong, Yin, Ji, Linhong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 6.07 MB

english, 2016

3

Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

Lakhdar, Nacereddine, Lakehal, Brahim

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 442 KB

english, 2016

4

Characteristic diode parameters in thermally annealed Ni/p-InP contacts

Turut, A., Ejderha, K., Yildirim, N., Abay, B.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 811 KB

english, 2016

5

Fabrication techniques and applications of flexible graphene-based electronic devices

Tao, Luqi, Wang, Danyang, Jiang, Song, Liu, Ying, Xie, Qianyi, Tian, He, Deng, Ningqin, Wang, Xuefeng, Yang, Yi, Ren, Tian-Ling

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 13.44 MB

english, 2016

6

Hybrid functional calculations on the band gap bowing parameters of In x Ga 1− x N

Lin, Mei, Xu, Yixu, Zhang, Jianhua, Wu, Shunqing, Zhu, Zizhong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 4.35 MB

english, 2016

7

Low substrate temperature deposition of transparent and conducting ZnO:Al thin films by RF magnetron sputtering

Waykar, Ravindra, Amit, Pawbake, Kulkarni, Rupali, Jadhavar, Ashok, Funde, Adinath, Waman, Vaishali, Dewan, Rupesh, Pathan, Habib, Jadkar, Sandesh

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.79 MB

english, 2016

8

Temperature-variable high-frequency dynamic modeling of PIN diode

Ye, Shangbin, Zhang, Jiajia, Zhang, Yicheng, Yao, Yongtao

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 641 KB

english, 2016

9

Design of power balance SRAM for DPA-resistance

Zhou, Keji, Wang, Pengjun, Wen, Liang

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 3.63 MB

english, 2016

10

Electronic structure and optical properties of F-doped β -Ga 2 O 3 from first principles calculations

Yan, Jinliang, Qu, Chong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

11

Thermal analysis in high power GaAs-based laser diodes

Gong, Xueqin, Feng, Shiwei, Yue, Yuan, Yang, Junwei, Li, Jingwei

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 830 KB

english, 2016

12

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

Zhang, Jin, Liu, Yuling, Yan, Chenqi, He, Yangang, Gao, Baohong

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 2.33 MB

english, 2016

13

Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

Panda, J., Jena, K., Swain, R., Lenka, T. R.

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 407 KB

english, 2016

14

A sensitive charge scanning probe based on silicon single electron transistor

Su, Lina, Li, Xinxing, Qin, Hua, Gu, Xiaofeng

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 3.69 MB

english, 2016

15

A low power CMOS VCO using inductive-biasing with high performance FoM

Liu, Weihao, Huang, Lu

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 1.67 MB

english, 2016

16

A physical model of hole mobility for germanium-on-insulator pMOSFETs

Yuan, Wenyu, Xu, Jingping, Liu, Lu, Huang, Yong, Cheng, Zhixiang

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 716 KB

english, 2016

17

High current gain 4H-SiC bipolar junction transistor

Zhang, Yourun, Shi, Jinfei, Liu, Ying, Sun, Chengchun, Guo, Fei, Zhang, Bo

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 575 KB

english, 2016

18

Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer

Ren, Xiaoli, Pang, Cheng, Qin, Zheng, Ping, Ye, Jiang, Feng, Xue, Kai, Liu, Haiyan, Yu, Daquan

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 3.33 MB

english, 2016

19

AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Song, Xubo, Lü, Yuanjie, Gu, Guodong, Wang, Yuangang, Tan, Xin, Zhou, Xingye, Dun, Shaobo, Xu, Peng, Yin, Jiayun, Wei, Bihua, Feng, Zhihong, Cai, Shujun

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 483 KB

english, 2016

20

Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

Feng, Jiangmei, Shen, Huajun, Ma, Xiaohua, Bai, Yun, Wu, Jia, Li, Chengzhan, Liu, Kean, Liu, Xinyu

Journal:

Journal of Semiconductors

Year:

2016

Language:

english

File:

PDF, 418 KB

english, 2016