Hot-Carrier Degradation Modeling of Decananometer nMOSFETs...

IEEE Electron Device Letters 2017 / 2 Vol. 38; Iss. 2

Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach

Sharma, Prateek, Tyaginov, Stanislav, Rauch, Stewart E., Franco, Jacopo, Makarov, Alexander, Vexler, Mikhail I., Kaczer, Ben, Grasser, Tibor
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2645901
Date:
February, 2017
File:
PDF, 899 KB
english, 2017
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