Modeled optical properties of SiGe and Si layers compared...

Solid-State Electronics 2017 / 03 Vol. 129

Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Kriso, C., Triozon, F., Delerue, C., Schneider, L., Abbate, F., Nolot, E., Rideau, D., Niquet, Y.-M., Mugny, G., Tavernier, C.
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Volume:
129
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.12.011
Date:
March, 2017
File:
PDF, 548 KB
english, 2017
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