Volume 129

Solid-State Electronics

Volume 129

1

Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies

Xu, Yux, Xiang, Ping, Xie, Xiaopeng

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 677 KB

english, 2017

2

Impact of series resistance on the operation of junctionless transistors

Jeon, Dae-Young, Park, So Jeong, Mouis, Mireille, Barraud, Sylvain, Kim, Gyu-Tae, Ghibaudo, Gérard

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.73 MB

english, 2017

3

Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions

Qiang, Lei, Liu, Wuguang, Pei, Yanli, Wang, Gang, Yao, Ruohe

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.13 MB

english, 2017

4

Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Wang, Chong, Zhao, Meng-Di, He, Yun-Long, Zheng, Xue-Feng, Wei, Xiao-Xiao, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.76 MB

english, 2017

5

Extraction method for parasitic capacitances and inductances of HEMT models

Zhang, HengShuang, Ma, PeiJun, Lu, Yang, Zhao, BoChao, Zheng, JiaXin, Ma, XiaoHua, Hao, Yue

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 859 KB

english, 2017

6

Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

Miyoshi, Makoto, Tsutsumi, Tatsuya, Kabata, Tomoki, Mori, Takuma, Egawa, Takashi

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 912 KB

english, 2017

7

Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

Daghighi, Arash, Hematian, Hadi

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.85 MB

english, 2017

8

Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Kriso, C., Triozon, F., Delerue, C., Schneider, L., Abbate, F., Nolot, E., Rideau, D., Niquet, Y.-M., Mugny, G., Tavernier, C.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 548 KB

english, 2017

9

Analysis of the reverse recovery oscillation of superjunction MOSFET body diode

Xue, Peng, Fu, Guicui

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 661 KB

english, 2017

10

High-performance vertical Si PiN diode by hole remaining mechanism

Tsukuda, Masanori, Baba, Akiyoshi, Shiba, Yuji, Omura, Ichiro

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.48 MB

english, 2017

11

The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

Protasov, D.Yu., Zhuravlev, K.S.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 870 KB

english, 2017

12

Structural, optical, and electrical-transport properties of Al-P-O inorganic layer coated on flexible stainless steel substrate

Kim, Moojin, Min, Jinhyuk, Kwak, Yongsu, Kim, Doori, Kim, Kyoung-Bo, Song, Jonghyun

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1008 KB

english, 2017

13

Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz

Deng, Marina, Quémerais, Thomas, Bouvot, Simon, Gloria, Daniel, Chevalier, Pascal, Lépilliet, Sylvie, Danneville, François, Dambrine, Gilles

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.96 MB

english, 2017

14

A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded

Zhu, W., Li, J., Zhang, L., Hu, X.C.

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 940 KB

english, 2017

15

An ultra-wideband CMOS PA with dummy filling for reliability

Chang, Yu-Ting, Ye, Yu, Xu, Hongtao, Domier, Calvin, Luhmann, N.C., Gu, Q. Jane

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 3.75 MB

english, 2017

16

Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device

Yan, Hui-Yu, Li, Zhi-Qing

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.10 MB

english, 2017

17

Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM

Bogoslovskiy, Nikita, Tsendin, Konstantin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 818 KB

english, 2017

18

Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient

Xue, Peng, Fu, Guicui

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.94 MB

english, 2017

19

A high-speed lateral PIN polysilicon photodiode on standard bulk CMOS process

Zou, Wanghui, Xia, Yu, Chen, Diping, Zeng, Yun

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 587 KB

english, 2017

20

Investigation and process optimization of SONOS cell’s drain disturb in 2-transistor structure flash arrays

Xu, Zhaozhao, Qian, Wensheng, Chen, Hualun, Xiong, Wei, Hu, Jun, Liu, Donghua, Duan, Wenting, Kong, Weiran, Na, Wei, Zou, Shichang

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.37 MB

english, 2017

21

Single frequency correction based on three-element model for thin dielectric MOS capacitor

Zhang, Xizhen, Zhu, Huichao, Cheng, Chuanhui, Yu, Tao, Zhang, Daming, Zhong, Hua, Li, Xiangping, Cheng, Yi, Xu, Xuesong, Cheng, Lihong, Sun, Jiashi, Chen, Baojiu

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 831 KB

english, 2017

22

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

Al-Ameri, Talib, Georgiev, Vihar P., Sadi, Toufik, Wang, Yijiao, Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore M., Towie, Ewan, Brown, Andrew, Asenov, Asen

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.08 MB

english, 2017

23

Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

Xu, Miao, Zhu, Huilong, Zhang, Yanbo, Xu, Qiuxia, Zhang, Yongkui, Qin, Changliang, Zhang, Qingzhu, Yin, Huaxiang, Xu, Hao, Chen, Shuai, Luo, Jun, Li, Chunlong, Zhao, Chao, Ye, Tianchun

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.42 MB

english, 2017

24

Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

Onose, Hidekatsu, Kobayashi, Yutaka, Onuki, Jin

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.26 MB

english, 2017

25

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

He, Yan Jing, Lv, Hong Liang, Tang, Xiao Yan, Song, Qing Wen, Zhang, Yi Meng, Han, Chao, Zhang, Yi Men, Zhang, Yu Ming

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 2.52 MB

english, 2017

26

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

Lee, Sol Kyu, Seok, Ki Hwan, Chae, Hee Jae, Lee, Yong Hee, Han, Ji Su, Jo, Hyeon Ah, Joo, Seung Ki

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.22 MB

english, 2017

27

Carrier trapping anisotropy in ambipolar SnO thin-film transistors

Luo, Hao, Liang, Lingyan, Cao, Hongtao

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.29 MB

english, 2017

28

Editorial Board

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 55 KB

english, 2017

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