Nb Doped TiO 2 Protected...

IEEE Electron Device Letters 2017 / 2 Vol. 38; Iss. 2

Nb Doped TiO 2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors

Zhang, Letao, Zhou, Xiaoliang, Yang, Huan, He, Hongyu, Wang, Longyan, Zhang, Min, Zhang, Shengdong
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2644657
Date:
February, 2017
File:
PDF, 480 KB
english, 2017
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