Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures
Asahara, Ryohei, Nozaki, Mikito, Yamada, Takahiro, Ito, Joyo, Nakazawa, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, HeijiVolume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.101002
Date:
October, 2016
File:
PDF, 4.31 MB
english, 2016