Volume 9; Issue 10

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Applied Physics Express
Volume 9; Issue 10

Applied Physics Express

Volume 9; Issue 10

1

Performance of a SiC-nanowire-based explosive-emission pulsed plasma electron source

Xun, Tao, Zhang, Jian-de, Li, Gong-yi, Zhao, Xue-long, Hu, Tian-jiao, Yang, Han-wu

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 1.38 MB

english, 2016

2

Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

Oh, Sang Ho, Yonkee, Benjamin P., Cantore, Michael, Farrell, Robert M., Speck, James S., Nakamura, Shuji, DenBaars, Steven P.

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 3.08 MB

english, 2016

3

Suppression of spin transport in ferromagnet/oxide/semiconductor junctions by magnetic impurities in the tunnel barrier

Spiesser, Aurélie, Saito, Hidekazu, Yuasa, Shinji, Jansen, Ron

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 978 KB

english, 2016

4

Observation of magnetic resonance and Faraday rotation in a spinel ZnCr 2 Se 4 single crystal in the terahertz region

Zhang, Peng, Su, Fuhai, Chen, Xuliang, Zhang, Shile, Mei, Hongying, Yang, Zhaorong, Dai, Jianming, Pi, Li

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 842 KB

english, 2016

5

Two-dimensional photonic crystals based on anodic porous TiO 2 with ideally ordered hole arrangement

Kondo, Toshiaki, Hirano, Shota, Yanagishita, Takashi, Nguyen, Nhat Truong, Schmuki, Patrick, Masuda, Hideki

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 946 KB

english, 2016

6

Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Po-Hsun, Chen, Min-Chen, Sze, Simon M.

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 792 KB

english, 2016

7

Polarity-dependent effect of humidity on the resistive switching characteristics of nonpolar devices

Yin, Qiaonan, Wei, Chunyang, Wei, Qi, Chen, Yan, Xia, Yidong, Xu, Bo, Yin, Jiang, Liu, Zhiguo

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 993 KB

english, 2016

8

Tunable ultra-wide band-stop filter based on single-stub plasmonic-waveguide system

Chen, Zhiquan, Li, Hongjian, Li, Boxun, He, Zhihui, Xu, Hui, Zheng, Mingfei, Zhao, Mingzhuo

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 828 KB

english, 2016

9

Room-temperature laser annealing for solid-phase epitaxial crystallization of β-Ga 2 O 3 thin films

Shiojiri, Daishi, Fukuda, Daiji, Yamauchi, Ryosuke, Tsuchimine, Nobuo, Koyama, Koji, Kaneko, Satoru, Matsuda, Akifumi, Yoshimoto, Mamoru

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 944 KB

english, 2016

10

Improvement of voltage deficit of Ge-incorporated kesterite solar cell with 12.3% conversion efficiency

Kim, Shinho, Kim, Kang Min, Tampo, Hitoshi, Shibata, Hajime, Niki, Shigeru

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 705 KB

english, 2016

11

Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer

Hayashi, Takafumi, Nagata, Noriaki, Senga, Takashi, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Matsumoto, Takahiro

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 568 KB

english, 2016

12

Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

Ikeyama, Kazuki, Kozuka, Yugo, Matsui, Kenjo, Yoshida, Shotaro, Akagi, Takanobu, Akatsuka, Yasuto, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 981 KB

english, 2016

13

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO 2 /GaN-LED wafer

Tsuchiyama, Kazuaki, Yamane, Keisuke, Utsunomiya, Shu, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 718 KB

english, 2016

14

Planar cold cathode based on a multilayer-graphene/SiO 2 /Si heterodevice

Nishiguchi, Katsuhiko, Yoshizumi, Daisuke, Sekine, Yoshiaki, Furukawa, Kazuaki, Fujiwara, Akira, Nagase, Masao

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 858 KB

english, 2016

15

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Asahara, Ryohei, Nozaki, Mikito, Yamada, Takahiro, Ito, Joyo, Nakazawa, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 4.31 MB

english, 2016

16

Thermal cyclic etching of silicon nitride using formation and desorption of ammonium fluorosilicate

Shinoda, Kazunori, Izawa, Masaru, Kanekiyo, Tadamitsu, Ishikawa, Kenji, Hori, Masaru

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 486 KB

english, 2016

17

Local atomic structure analysis of SiC interface with oxide using chemical-state-selective X-ray absorption spectroscopy

Isomura, Noritake, Murai, Takaaki, Oji, Hiroshi, Nomoto, Toyokazu, Watanabe, Yukihiko, Kimoto, Yasuji

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 736 KB

english, 2016

18

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito, Ito, Joyo, Asahara, Ryohei, Nakazawa, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 1.85 MB

english, 2016

19

Localized electroporation effect on adherent cells in modified electric cell–substrate impedance sensing circuits

Kim, Yu Jin, Song, Ka Ram, Kim, Hee-Dae, Park, Bum Chul, Kim, Young Keun, Kang, Chi Jung

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 17.95 MB

english, 2016

20

Efficient stopping of current-driven domain wall using a local Rashba field

Tatara, Gen, Saarikoski, Henri, Mitsumata, Chiharu

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 857 KB

english, 2016

21

Wavelength extension beyond 1.5 µm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy

Ha, Neul, Mano, Takaaki, Wu, Yu-Nien, Ou, Ya-Wen, Cheng, Shun-Jen, Sakuma, Yoshiki, Sakoda, Kazuaki, Kuroda, Takashi

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 1.71 MB

english, 2016

22

Tri-halide vapor-phase epitaxy of GaN using GaCl 3 on polar, semipolar, and nonpolar substrates

Iso, Kenji, Takekawa, Nao, Matsuda, Karen, Hikida, Kazuhiro, Hayashida, Naoto, Murakami, Hisashi, Koukitu, Akinori

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 708 KB

english, 2016

23

Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography

Takamizawa, Hisashi, Shimizu, Yasuo, Inoue, Koji, Nozawa, Yasuko, Toyama, Takeshi, Yano, Fumiko, Inoue, Masao, Nishida, Akio, Nagai, Yasuyoshi

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 734 KB

english, 2016

24

Erratum: âFranzâKeldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltageâ

Maeda, Takuya, Okada, Masaya, Ueno, Masaki, Yamamoto, Yoshiyuki, Horita, Masahiro, Suda, Jun

Journal:

Applied Physics Express

Year:

2016

File:

PDF, 207 KB

2016

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